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In this paper, we proposed a graphene-silicon diode loaded patch antenna, which is fabricated on silicon wafer. The structure of patch antenna is perfectly compatible with the diode process. Its equivalent circuit and frequency-tunable characteristics are analyzed with an equivalent circuit model. The result is verified by 3-D full-wave simulation. This patch antenna, which is directly printed on...
This paper reports on the pulsed I-V and microwave characterizations of a Graphene Nano Ribbon FET (GNR-FET) for nonlinear electrical modeling. The extraction method of model parameters is based on the characterization of three specific technological structures called PAD, MUTE and FET (integrating only the coplanar access structure, the FET without graphene, and the entire GNR-FET) respectively....
This brief presents low-frequency noise measurements on a graphene field-effect transistor with graphene layer decomposed from SiC substrate. The measurements indicate the predominance of flicker noise in the current noise source measured between drain and source with quadratic dependence with a drain current. The noise level is inversely proportional to the channel area indicating the location of...
RF characterization of epitaxial graphene nano ribbon field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of {0001} silicon carbide under UHV environment. Raman spectroscopy, AFM and Hall measurement were used to investigate the properties of graphene synthesized. Despite the Hall mobility was lower than 500 cm2/Vs, the intrinsic current...
We propose an overview of our works on graphene field effect transistors (GFETs) on silicon carbide (SiC) substrate. The multilayer graphene was synthesized by thermal decomposition of Si-face silicon carbide (SiC). The GFET was fabricated, based on an array of parallel graphene nano ribbons (GNRs). The impact of the number of graphene layers on device performance was explored. It was found that with...
We propose an overview of our works on graphene field effect transistors (GFETs) on silicon carbide (SiC) substrate. The multilayer graphene was synthesized by thermal decomposition of Si-face silicon carbide (SiC). The GFET was fabricated, based on an array of parallel graphene nano ribbons (GNRs). The impact of the number of graphene layers on device performance was explored. It was found that with...
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