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We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been...
We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of operation and threshold voltage is derived. Furthermore, self-terminating programming is considered using...
We review the recent progress on the development of two-terminal resistive devices (memristors). Devices based on solid-state electrolytes (e.g. a-Si) have been shown to possess a number of promising performance metrics such as yield, on/off ratio, switching speed, endurance and retention suitable for memory or reconfigurable circuit applications. In addition, devices with incremental resistance changes...
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