The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300°C on silicon substrates. The precursors used were Ho(thd) 3 , Ti(OCH(CH 3 ) 2 ) 4 and O 3 . The composition of the films was varied via changing the holmium–titanium ratio by variation of relative amounts of the sequential deposition cycles of constituent oxides, i.e. Ho ...
Nanolaminate (nanomultilayer) thin films of TiO 2 and Ho 2 O 3 were grown on Si(001) substrates by atomic layer deposition at 300°C from alkoxide and β-diketonate based metal precursors and ozone. Individual layer thicknesses were 2nm for TiO 2 and 4.5nm for Ho 2 O 3 . As-deposited films were smooth and X-ray amorphous. After annealing at 800°C and higher...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.