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We describe and discuss our approach to improved manufacturability of millimeter-wave InP-type HEMT IC technology. The main ingredients are the use of (1) GaAs (rather than InP) as substrate, with a buffer that grades the lattice constant to that of the high-mobility Ga 0.47 In 0.53 As channel; (2) low-resistance non-alloyed ohmic contacts with good reliability...
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