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Light-induced degradation (LID) in boron-doped Cz Si cells is known to be a function of the substrate boron and oxygen concentrations. In this paper, a combination of PC1D simulations and device theory is used to show that the efficiency loss due to LID is also a function of cell design. In particular, this loss was found to increase significantly when the surface passivation of cells is improved...
This work examines two challenges facing the commercialization of boron diffused crystalline silicon solar cells - unintentional iron contamination and the passivation of a textured boron diffused surface. We find that when Fe is introduced into silicon wafers by boron diffusion, the Fe often remains trapped in the boron surface layer and undetectable using bulk lifetime measurements. However this...
This paper reports on the characteristics of a spin-on dielectric which has been used as the rear-surface passivation layer to achieve 20% efficient screen-printed (SP) boron back-surface field (B-BSF) solar cells. The dielectric provides, in a single thermal step, both stable passivation of a heavily doped p+ surface and strong gettering of iron which is a common contaminant in high-temperature boron...
Low-cost high efficiency solar cells are the key to achieving grid parity with photovoltaic devices. This paper details the fabrication, characterization and analysis of 4 cm2 screen printed cells with efficiency over 20% achieved using a local back surface field cell structure in conjunction with a 75 ohm/sq emitter and efficient back surface reflector. A streamlined process sequence involving a...
This paper reports on the characteristics of a negatively charged spin-on dielectric which has been used as the rear surface passivation layer to achieve 20% efficient screen-printed boron back surface field (B-BSF) solar cells. Solar cell schemes which utilize a heavily doped boron back surface field often face the challenges of avoiding wafer contamination during a long, high-temperature diffusion...
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