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Reliability of Superjunction (SJ) MOSFET is closely related to its manufacturing process. Experiments are carried out to investigate the electrical characteristics in high temperature of SJ MOSFET produced by deep trench filling technology. Filling holes are confirmed to be responsible for the performance deterioration in high temperature and the mechanism has been analyzed thoroughly.
Wide bandgap semiconductor devices like SiC have achieved more and more attentions in electric vehicles-(EVs) because of their high-temperature capability, high-power density, and high efficiency. As all known, EVs frequently operate in acceleration, deceleration and low speed driving in urban traffic. Thus, not only the rated operation condition should be considered, but also some extreme operation...
A new superjunction lateral double diffused MOSFET (LDMOST) is designed with an N-type buried layer in the P-substrate near the drain to suppress the effect of substrate-assisted depletion resulting from N-type charges' compensating charges' imbalance between the pillars of the superjunction layer. By the effect of the electric field modulation, a more uniform surface electric field is obtained by...
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