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Active modulation of light with large optical bandwidths (∼100 nm [1]) is required in photonic devices, such as modulators for fiber communications [1] and saturable absorbers for ultrafast pulse generation [2,3]. Present modulators use expensive materials, (e.g. LiNbO3 [4], III-V semiconductors [5], and Ge on silicon-on-insulator (SOI) [6]), and are limited by narrowband operation (∼20 nm for quantum-confined...
We have proposed and experimentally demonstrated a scheme for highly efficient excitation of surface plasmon using a structure consisting of an aperture in metal with a thin dielectric film at one side of the aperture.
Using plane wave method (PWM) combined with supercell method, Fourier extension coefficient of dielectric function for arbitrary defects in parallelogram lattice PC are derived, then the point and line defect modes of TM mode for 5times5 supercell PC with lattice angle 70deg are calculated. These results would provide theoretical instruction for designing vacuum electron devices using PC with parallelogram...
We demonstrate four-wave-mixing with <5 mW CW pump power in high-index, doped silica glass micro-ring resonators. We also demonstrate efficient self-phase modulation for pulses with <100 W peak power, with negligible nonlinear absorption up to 25 GW/cm2.
We report wavelength conversion of ultra-low power CW light in integrated silica glass micro-ring resonators via four-wave-mixing in the C-band, as well as strong self-phase modulation of < 100 W peak power optical pulses in a 45 cm waveguide.
We present the first demonstration of CW nonlinear optics in integrated glass waveguides. We achieve wavelength conversion via four-wave-mixing with a few mW of CW pump power in the C-band in a high-index, glass micro-ring resonator.
The propagation loss of Si/sub 0.9/Ge/sub 0.1//Si planar optical waveguides has been measured at wavelengths of 1.15 and 1.523 mu m. The results show that these waveguides have a low propagation loss (<1 dB/cm) at a wavelength of 1.523 mu m, which is due to the intrinsic absorption of SiGe whereas at a wavelength of 1.15 mu m its loss is determined by both the SiGe absorption edge and defects at...
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