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Abstract-Systematic evaluation of ferroelectric memory (FRAM) data retention mechanisms under high temperature exposure are reported. The FRAM devices are embedded on ultra-low power, analog-enhanced 130nm and 180nm CMOS technologies. Capability of the FRAM to retain data through 260°C Pb-free solder assembly reflow is demonstrated. The 130nm FRAM is shown to achieve the equivalent of 10 years data...
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 1013 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
We present the design concept of a bimetallic thermocouple array-based temperature sensor to monitor thermal behavior of integrated circuits. Our proposed design is able to provide fine-grain thermal characterization. Such a sensor array that is capable of monitoring a large area accurately at a fine granularity is essential to perform reliable and effective dynamic thermal management for high performance...
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