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Half metal magnetite (Fe3O4) is a widely studied material as it presents unique properties such as theoretically 100 % spin polarization at the Fermi level, metal to insulator transition (Verwey transition) at 120 K, ferrimagnetic nature with 858 K Curie temperature, and multiferroicity at low temperatures, all of these crucial issues for both material science and engineering[1]. Graphene, a single...
We study the variability of the electrical characteristics of silicon-on-insulator (SOI) SB-MOSFETs. A new method by extracting the variation of the threshold voltage from a large number of devices with different SOI thicknesses enables determining the main sources of variability and distinguishing between them. It is found that the device-to-device variability is mainly due to the inherent variation...
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the SBs. It is shown that decreasing the gate...
Schottky barrier height engineering by silicidation induced impurity segregation is demonstrated. The segregation of sulfur at the NiSi/Si interface leads to a gradual decrease of the SBH on n-Si(100) from 0.65 eV to 0.07 eV, and correspondingly, to an increase of the SBH on p-Si(100). Alternatively, the effective SBH of NiSi is reduced by As and B segregation during silicidation. Using these techniques,...
Silicon carbide is a leading semiconductor for high power, high temperature electronics, yet SiC devices still face problems of electrical contact control and reproducibility. Recent work worldwide shows that point and extended defects in SiC as well as chemical reactions at metal-SiC interfaces can influence contact transport properties. Yet Schottky barrier and ohmic contact formation at the intimate...
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