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The optical and electrical properties of 270/290/330-nm AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) with different Al content in quantum wells and barriers have been investigated systematically. Based on the experimental and numerical study, it is observed that the UV LEDs with longer wavelength and lower Al composition in AlGaN multiple quantum wells (MQWs) possess less dislocation...
The objective of the present study is to develop a robust high-throughput assembly process of light emitting diode arrays for wide area general lighting. Topics to be covered in this paper include the conceptual design, the flexible printed circuit substrate, flip chip assembly, yellow phosphor coating, and encapsulation. All these are integrated into one reel-to-reel assembly process. A prototype...
The objective of the present study is to develop a robust high-throughput assembly process of light emitting diode arrays for wide area general lighting. Topics to be covered in this paper include the conceptual design, the flexible printed circuit substrate, flip chip assembly, yellow phosphor coating, and encapsulation. All these are integrated into one reel-to-reel assembly process. A prototype...
Planar metal-semiconductor-metal light-emitting diodes with InGaN/GaN multi-quantum-wells (MQWs) as the active layer have been demonstrated for the first time. The diodes with interdigitated Schottky electrodes fabricated on p-GaN contact layer exhibit symmetrical current-voltage characteristic with a turn-on voltage of ~ 13 V at 20 mA. The violet light emission centred at 408 nm is generated by radiative...
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