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In this work we reported a new methodology for ink coating for TEM sample preparation. Detailed pre-FIB and FIB processes were performed under different conditions such as method of coating used and baking temperatures. TEM profile was taken on all prepared sample to understand the critical dimensions of PR under various conditions, and a comparison was made to conclude the best coating method to...
In this work we reported TEM failure analysis of an inline defect issue, nanosized poly bump defect formed during poly CVD process. Detailed TEM analysis was performed for the characterization of microstructure and composition of the nanosized defects by using various TEM FA techniques, including EDX, EELS analysis. It was found out that underneath the poly bump defect had a core-shell structure,...
There is increasing demand of advanced TEM techniques for modern IC failure analysis. Some practical issues of using TEM holography in studying MOSFETs P-N junction, channel strain and magnetic domains are discussed in this paper. It is shown that salicide/contact have significant effect on the phase diagram of shallow S/D P-N junction and hinders its application in shallow junction devices. In holography...
A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.
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