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Conducting bridge random access memory (CBRAM) is one of the potential technologies being considered for replacement of Flash memory for non-volatile data storage. CBRAM devices operate on the principle of nucleation and rupture of metallic filaments. One key concern for commercializing this technology is the question of variability which could arise due to nucleation of multiple filaments across...
We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-κ metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations...
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