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The technology of CMOS‐compatible Single Photon Avalanche Diodes is evolving rapidly and has matured to the point at which it can address the requirements of a range of imaging applications. In this report we consider the current suitability and future potential of CMOS‐compatible Single Photon Avalanche Diodes to address the particular application of display metrology.
A 9.8μm pitch SPAD-based pixel is presented with a novel and scalable Sample and Hold (S/H) Time to Amplitude Converter (TAC) pixel architecture offering the potential to create high spatial resolution Time Correlated Single Photon Counting (TCSPC) image sensors in the future. This pixel pitch is an order of magnitude smaller than previous TCSPC pixels. The NMOS-only TAC performance is measured in...
We report a CMOS single photon avalanche diode (SPAD) with a 2mm active diameter, 9Hz dark count rate at 20°C, photon detection efficiency peak of 14% at 500nm, implemented in a 130nm process technology. The implicit guard ring structure relies on retrograde well doping and overcomes a key problem in scaling SPAD devices to small dimensions. TCAD-based device simulations point the way to high resolution,...
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