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By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
A refractive index buffer enhanced grating coupler in silicon-on-insulator (SOI) was demonstrated. By a PMMA cladding layer, the grating coupler with the efficiency of 44% and 3-dB bandwidth of > 40 nm was obtained.
In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found,...
The relationship between the domain inversion and the Curie temperature of LiTaO 3 has been studied. The T C temperature of the exchanged LiTaO 3 is determined to be about 585°C by DSC measurements. Experiments show that the domain inversion can take place at temperatures either higher than or lower than the T C of the exchanged LiTaO 3 , depending on the heat...
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