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A simple method is described to protect polycrystalline silicon (polysilicon) from electrochemical corrosion which often happens when the Micro-Electro-Mechanical systems (MEMS) device is released in HF-based solutions, especially when the device contains noble metal. We propose to employ a photoresist (PR) layer to cover the noble metal layer, which electrically contacts with the underlying polysilicon...
We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching...
Terahertz wire-grid polarizer with 500 nm grating period on high resistivity silicon (100) is fabricated using nanoimprinting lithography (NIL). Preliminary results show a good polarization characteristic ranging from 0.5 to 5 THz. The method is high throughput and low cost.
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained...
This paper propose the utilization of a photolithographic process to elevate the metal lines position that relative to the wafer plane, in order to take advantage from the signal propagation practically on-the-air, gained an almost ideal TEM mode of propagation in CPW structure. S-parameter and coupling degree of CPW with porous Si (PS), SOI and high resistivity silicon (HRS), SOI substrates are compared.
This paper describes the fabrication process and device performance of CMOSFET with direct silicon bonded (DSB) substrate. This works offers the first comprehensive evaluation of source/drain engineering for DSB devices. Scanning spreading resistance microscopy (SSRM) technique reveals specific dopant profile that lateral diffusion along the bonding interface, in addition to the highly activated dopant...
We show key design guidelines for three types of micro-ring modulators. We find that: (i) the dual-waveguide structure can have a 10-dB higher Q and is tolerant to long transit times, (ii) the induced peak shift can have an optimal value, and (iii) detuning before transmission can decrease penalty 10 dB further.
Monolithic microwave IC (MMIC) is on low-resistivity silicon that mostly would bring line attenuation and deteriorate of circuit quality because of substrate extremely high dielectric loss. There has been a great demand for low-loss and low-cost substrate. Porous silicon (PS) has been proved as a promiseful substrate material for CPW, MEMS switch, and so on high frequency applications.
Free-standing SiGe/Si microtubes, microneedles, helical coils, bridges and submicron vertical rings have been fabricated from elastically strained SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition. Three-dimensional micro- and nano-objects have been formed by self-scrolling after electron beam lithography, reactive ion etching and wet selective etching. Vertical rings with...
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