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We investigate the bow of free standing (0001) oriented HVPE grown GaN wafers and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the wafers. The origin of the stress gradient and the curvature is attributed to the inclination of edge threading dislocations (TDs) with respect to original [0001] GaN wafer or boule growth direction...
We have examined the anisotropic terahertz response of highly aligned single-wall, double-wall, and multiwall carbon nanotubes and quantitatively characterized their performance as low-cost terahertz polarizers.
A planar dipole array on low-temperature (LT) growth gallium arsenide (GaAs) or cyclo olefin polymer film is analyzed for magnetic terahertz surface wave, TE wave propagation. A laser pulse excites the dipole gap in order to generate photo carriers on the surface of a LT-GaAs photoconductive substrate. A dipole array on the LT-GaAs substrate is designed for a surface wave around 0.40 THz. The analysis...
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
We present the effects of partial strain relaxation on the optical properties in lattice mismatched semipolar (1122) InGaN using polarization-dependent photoluminescence measurements to probe the strain dependent band mixing of the valence bands.
The use of nonpolar or semipolar AlGaN for UV-C diode lasers avoids the compromises in gain, injection efficiency, and ohmic losses imposed on c-plane lasers by the unusual valence band structure of AlGaN alloys.
Tunnel oxide degradation in TANOS devices and its origins were investigated in terms of program, erase, and endurance device operation modes. It was found that the erase operation may cause significant tunnel oxide degradation, while the degradation due to program operation is negligible. In the erase and endurance modes, tunnel oxide degradation is primarily controlled by the process of electron...
The origin of stress induced leakage current and defect generation process in the high-k/metal gate stacks under the substrate hot carrier stress and constant voltage stress is investigated. The data suggests that the defects responsible for the SILC increase are located near the high-k/SiO2 interface. Generation of these defects is mostly caused by the cold carriers injected from the inversion layer...
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