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GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built...
A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers embedded in an analysable metal structure. The gate finger is characterised by de-embedding metallisation from a standard test structure. The device is then re-built, with any geometry or layout that the foundry allows, and modelled by electromagnetic...
The presented theoretical analysis of random telegraph signal (RTS) and 1/f noise data provides consistent interpretation of the measurement results allowing trap characteristics to be extracted and the atomic structure of oxide traps to be identified. We emphasize the critical role of the lattice structural relaxation associated with charge trapping/detrapping, which represents one of the major factors...
We present a comprehensive description of the processes contributing to the electron capture/emission by bulk oxide traps, which allows for interpretation of RTS and 1/f noise data and extraction of the trap characteristics. It is shown that the electron capture/emission times could be controlled by the trap structural relaxation (caused by the trapped electrons) rather than by the electron tunneling...
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