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Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1 THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky...
We discuss a number of practical issues in measurements with the recently proposed microwave raster scanning setup for near-field imaging of tissue. We consider the uncertainties in the measurements of phantoms emulating biological tissues. We discuss improvements in the design of sensors tailored for this application. We evaluate the performance of a tissue sensing sensor in terms of a parameter...
In this paper we will present our latest research results of integrated quantum dot Schottky diodes and integrated silicon antenna for RF applications. Both, the quantum dot Schottky diodes and the antenna are integrated on Si substrates forming a simple mm-wave detection system, the rectifying antenna (RECTENNA). Within this work a specific antenna design, 1-dimensional array (single line antenna),...
In this paper we will present our latest research results of integrated silicon antennas for automotive radar applications (f = 80 GHz). The design procedure as well as simulation and first measurement results will be given. Within this work two antenna designs, a 1-dimensional array (single line antenna) and a 2-dimensional antenna array (4 lines with 4 patches), will be shown. First measurement...
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