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By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200-300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed...
We present our progress in attaining high efficiency nc-Si:H solar cells at high deposition rates with superior light soaking stability. We have focused our effort on three areas: (i) improving the spatial uniformity and homogeneous properties for nc-Si:H, such as crystallite grain size and volume fraction, (ii) optimizing nucleation and seed layer during the initial growth of the nc-Si:H film, and...
A silicon waveguide based splitter is a key device for polarization diversity circuit. A bilayer waveguide structure was proposed by MIT to split the input light into its orthogonal components. It is challenging to fabricate a bilayer silicon waveguide by the conventional two-step-etching process due to precise alignment and accurate etch thickness required. In addition, the partial etched waveguide...
We fabricated five different types of a-SiGe:H and nc-Si:H based multi-junction solar cell structures using modified very high frequency (MVHF) technology. After optimization, all five structures reached similar initial cell performance, i.e. ~12% small active-area (0.25 cm2) efficiency and 10.6-10.8% large aperture-area (?? 400 cm2) efficiency after encapsulation. However, they showed quite different...
A microwave re-entrant cavity is applied to create a miniature beam of plasma species. A miniature microwave plasma discharge is created using 2.45 GHz microwave energy to generate a discharge inside 1-2 mm inner diameter (i.d.) tubes with a micromachined aperture on the end. Through this aperture the plasma stream for materials processing is formed. The diameter of the plasma stream considered in...
We report the first detailed characterization, to the best of our knowledge, of wavelength dependence of two-photon absorption and the Kerr nonlinearity in silicon over a spectral range extending from 1.2 to 2.4 mum.
In this paper, the first experiment results from Si/SiGe bound-to-continuum quantum cascade emitters are presented operating at THz frequencies. The quantum cascade emitters are grown by chemical vapour deposition (CVD)/gas source molecular beam epitaxy (MBE) and solid-source MBE
Summary form only given. Miniature discharges and their potential use for local area materials processing including etching, surface activation, and plasma-assisted CVD are investigated in this study. The objective of this study is to do materials etching steps on localized areas by applying a small discharge to only the region being processed. A miniature microwave plasma discharge applicator design...
Summary form only given. Miniature discharges and their potential use for local area materials processing are investigated in this study. The objective of this study is to do materials processing steps including etching, surface activation, and plasma-assisted CVD on localized areas by applying a small discharge to only the region being processed. A miniature microwave plasma discharge applicator...
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