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Warpage of micro-electronics caused by the curing process and thermal cycling is of major importance in electronic packaging. Industry is availed by good methods to be able to predict warpage accurately. The main difficulty for prediction of warpage is caused by the complicated material behavior of molding compound. It turns out that the mechanical behavior of molding compound is dependent on time,...
Warpage is a critical issue for an electronic package molding process. Much work is done in the past to predict the warpage of a package after the cooling down from the molding process. However, there are many material models for the molding compound to predict warpage: Elastic and viscoelastic models are used, and there are even groups which use cure-dependent viscoelastic models. In this paper,...
Warpage is a critical issue for a QFN panel molding process. Much work is done in the past to predict the warpage of a package during cooling down from molding temperature. However, until now, warpage could not always be predicted well, even if the viscoelastic behavior of the molding compound is taken into account. It was for example observed that the cooling velocity affected the warpage after cooling...
The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.
This work is focused on numerical investigation of the corner delamination behavior at the chip top surface of plastic encapsulated semiconductor packages which is induced under temperature loading. Two points of interest are pursued in this study: 1) impact of mold compound (MC) material properties and 2) influence of package geometry on the delamination behavior. For the first part we identify influence...
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