The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties...
A micromachined silicon rocking actuator is used to tune a high temperature superconducting resonator. Its performance at cryogenic temperatures from 77 to 30 K is studied. A significant increase in the quality factor of the resonator, from 376 to 13876, is observed. It is confirmed that the change in resistance of the silicon tuning probe with temperature is the main factor responsible for the improvement...
Solution-processed spherical surface textures are demonstrated as a cost-effective antireflection coating on commercial amorphous Si solar cells. The spherical textures are formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass film. It is found that the spherical texture reduces the reflectance of the cells in a broad wavelength range of 400 - 1,200 nm....
We present a characteristic function approach to parameter extraction for Si-based on-chip spiral inductors with a center tap. A closed-form analytical expression to extracting the model parameters specifically for the center tap branch is developed. The model parameters can then be extracted analytically. The validity of the present approach is verified by measurement based on 0.18 ??m CMOS process.
A low loss sharp bend is proposed and analyzed in the slow-light waveguide which is consisted of a series of silicon nanopillars. More than 90% of transmission over 100 nm bandwidth is obtained.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.