The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover,...
Carbon, Fluorine, and Nitrogen are the co-implant species known for performing PMOS ultra-shallow junction. For the first time, it is demonstrated that the combination of the above three co-implant species could be most effective in suppressing boron diffusion for the continuous device performance improvement of sub-32 nm technology. Vth roll-off characteristics were dramatically improved and a DIBL...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.