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This paper reports on development of AFM-like active CMOS-MEMS conductive probes and arrays. The active probes are aimed for scanning tunneling microscopy (STM) imaging and field-emission (FE) assisted nanostructure formation. Two kinds of STM tip approaches compatible with CMOS-MEMS process — Electron-Induced Beam Deposition (EBID) and Spindt tip method — are presented, and their functionality is...
Continuously down-scaling EOT and improving mobility are required for CMOS device. Small 0.6~1 nm EOT and low Vt of ~0.15 V are achieved in CMOS by using higher κ gate dielectric and novel process. The ultimate EOT scaling is limited by the inserted ultra-thin SiON interfacial layer in high-κ/Si to reduce the mobility degradation. Further mobility improvement is obtained by using Ge channel MOSFET...
This paper reports a novel silicon microcantilever sensor with an embedded n-type metal-oxide semiconductor field-effect transistor (nMOSFET) for the detection of relative humidity (RH) based on the surface stress sensing principle. The nMOSFET has a channel along <100> crystal orientation of (100) silicon, which is parallel to the microcantilever. The RH detection is realized by coating a thin...
Traditional IC scaling is becoming increasingly difficult at the 22 nm node and beyond. Dealing with these challenges increase product development cycle time. For continued CMOS scaling, it is essential to start design explorations in new process nodes as early as possible. Such an effort requires having Predictive Technology Models, which bridge technological and design practices, in order to assess...
In summary, this study successfully demonstrates the design and implementation of high performance CMOS condenser microphones. Microphone with a flat frequency response between 100 Hz~20 KHz have been fabricated in a reproducible way. The interlace slots structure not only reduce the intrinsic stress of diaphragm also changing the stiffness of diaphragm and shrink the size of membrane. The major advantage...
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
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