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Cascaded 4×4 SOA switches with on-chip power monitoring exhibit potential for low power 16×16 integrated switches. Cascaded operation at 10Gbit/s with an IPDR of 8.5dB and 79% lower power consumption than equivalent all-active switches is reported.
The first monolithically integrated 4×4 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved.
Due to their inherent bandwidth capacity, optical interconnects are replacing copper as bottlenecks begin to appear within the various interconnect levels of electronic systems. Current optical interconnect solutions found in industry are based upon optical fibres and are capable of providing a suitable platform for inter-board applications. However, to allow high bit rate digital interconnects between...
An overview of the pound1.3 million EPSRC and company matched funded Innovative electronics Manufacturing Research Centre (IeMRC) Flagship project between 3 UK universities and 10 companies entitled ldquointegrated optical and electronic interconnect PCB manufacturingrdquo. The project aims to develop of optical waveguide design rules, layout software, fabrication methods compatible with commercial...
We demonstrate a novel structure of photodiode. By incorporating the leaky optical waveguide with distributed-Bragg-reflector (DBR) and partially p-doped photo-absorption layer, this device exhibits much superior performance of speed, saturation power, and responsivity to the control without DBR mirrors
In this letter, we describe a novel edge-coupled photodiode (PD) structure, which can greatly relax the dependence of the responsivity on the cleaved length of an evanescently coupled optical waveguide. The integration of a leaky optical waveguide with a distributed Bragg reflector (DBR) and a partially p-doped photoabsorption layer allows the demonstrated device to exhibit a higher saturation current-bandwidth...
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