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The authors report the fabrication of GaN-based metal-semiconductor-metal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce...
In summary, we report the first experimental realization of PDs with high-k cap layer, In0.1Ga0.9N/HfO2, and then, we keep work to study variation of HfO2 thickness and annealed conditions were used to control and optimize the PDs characteristic.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
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