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In summary, we report the first experimental realization of PDs with high-k cap layer, In0.1Ga0.9N/HfO2, and then, we keep work to study variation of HfO2 thickness and annealed conditions were used to control and optimize the PDs characteristic.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth...
The net modal gain, effective group index and linewidth enhancement factor (LWEF) in edge-emitting InGaAsN/GaAs lasers have been determined as a function of both temperature and injection current from experimentally amplified spontaneous emission spectra. The shift of the peak gain with temperature was found to be 0.49 nm/K. Values of effective group index between 3.52 and 3.59 were measured, suggesting...
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