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The authors report the fabrication of GaN-based metal-semiconductor-metal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce...
ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source-drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ??C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
In this paper, it is found that the optimal STI process can effectively reduce bulk leakage from junction and this is very important for low power devices. Also, we found an optimal STI process to reduce standby current of SRAM. According to bulk current becomes worse with device width shrinkage and also increases standby current of SRAM, we used optimal STI process for step height, divot and corner...
In this work we have measured the lateral spontaneous emission profile for the lasers, using scanning near-field optical microscopy (SNOM). Since the near-field of the spontaneous emission maps the lateral carrier distribution in the active region, this measurement provides a way to directly measure the lateral diffusion. The obtained profile therefore represents the optical mode which is well confined...
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