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In summary, we report the first experimental realization of PDs with high-k cap layer, In0.1Ga0.9N/HfO2, and then, we keep work to study variation of HfO2 thickness and annealed conditions were used to control and optimize the PDs characteristic.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth...
In this work, we optimise the structure of an uncooled directly modulated 1.3 mum GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and...
In this work we have measured the lateral spontaneous emission profile for the lasers, using scanning near-field optical microscopy (SNOM). Since the near-field of the spontaneous emission maps the lateral carrier distribution in the active region, this measurement provides a way to directly measure the lateral diffusion. The obtained profile therefore represents the optical mode which is well confined...
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum2 broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength...
Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mum is centered at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.
In this work, we optimize the thermal performance of a double quantum well GalnNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the p-cladding doping concentration on the heat generation within...
We demonstrate uncooled 2.5 Gb/s operation up to 110degC of 1.3 mum GaInNAs double quantum well lasers with low threshold current and excellent temperature stability.
We demonstrate uncooled 10 Gbps operation of 1.3 μm ridge waveguide GaInNAs lasers with a double quantum well active region up to 110°C. The low temperature sensitivity enables the use of a constant modulation voltage
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same...
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