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ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source-drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ??C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
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