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Using Ho3+ and Tm3+ codoped PLZT ceramic gain media, excellent upconversion was observed and investigated. A new model was proposed, leading ways towards upconversion-based laser and sensor development.
CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when...
Summary form only given. InGaAs/GaAs strained-layer quantum well structures grown on non-(001) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the low-temperature photoluminescence of InGaAs/GaAs (111)B single quantum well structures with 25% Indium mole fraction. The combination of band-gap narrowing and screening of the internal fields...
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