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Carrier transport in heavily doped extremely thin silicon- on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility ( μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily...
Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-kappa gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-kappa pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (DeltaId/Id) by the surface holes is smaller in...
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