Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-kappa gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-kappa pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (DeltaId/Id) by the surface holes is smaller in high-kappa pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-kappa gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-kappa gate dielectric.