The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigated lasing characteristics of (In)GaAs TQWs VCSELs with different In composition in terms of low power consumption. The bias current of 10 Gbps operation was reduced by using InGaAs TQWs.
We demonstrate all-optical flip-flop operation of Mach-Zehnder bistable lasers with falling time of less than 68 ps. The device can be controlled with continuous 58-nm wavelength range of input light.
A monolithically integrated 1times5 InP/InGaAsP optical switch based on optical phased array is fabricated and characterized. Wide operating bandwidth covering entire C-band (1520-1580 nm) and nanoseconds dynamic response are demonstrated for the first time.
Multimode interference bistable laser diode all-optical flip-flop has been considered to be a clever candidate to achieve all-optical memory devices. In this paper, basic results of polarization-insensitive operation of all-optical flip-flop are reported. Polarization-insensitive operation of static flip-flop was demonstrated with injection power level higher than +3 dBm.
An integrated semiconductor 1times5 InP-InGaAsP optical phased-array switch is fabricated and characterized. Using the carrier-induced refractive index change of InGaAsP waveguide, we achieve successful switching to five output ports with less than 60-mA current injection. Wide operating bandwidth covering the entire C-band (1520-1580 nm) and nanoseconds dynamic response are demonstrated, making it...
An integrated semiconductor 1times5 optical phased-array switch is designed and demonstrated for the first time. Using the carrier-induced refractive index change in the InGaAsP bulk layer, we achieve successful switching to five output ports with less than 60-mA current injection.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.