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This paper applies for the first time an RF equivalent of the four-point probe Kelvin DC technique to characterize the TSV inductance. This RF approach is based on two-port S-parameter measurements over a wide frequency range using a vector network analyzer (VNA). The approach is easy to implement to determine the TSV inductance, which can be complementary to the DC Kelvin measurements. In addition,...
This paper investigates the influence of TSV noise coupling on nearby devices based on an extended 3D TSV circuit model. This model not only takes into account the complex RF field distributions in bulk Si, but also incorporates the anomalous TSV capacitance inversion behavior, which has been found to occur due to the presence of fixed charges in the backside passivation layer after wafer thinning...
This paper presents a 3D circuit model capable of rapidly and accurately evaluating substrate noise coupling in the context of 3D integration. Since TSVs are large and noisy structures, the evaluation of electromagnetic coupling to and from TSVs has become crucial to the design of threedimensional integrated circuits. In this work, we present a fast and accurate 3D circuit model to this end. The model...
3D technologies provide promising solutions to meet the needs of today's high performance and high speed ICs. Therefore, a methodology is required to model, predict, and optimize the 3D interconnect performance. This paper focuses on modeling of the performance of 3D interconnect test structures, realized on Si substrates, both in the time frequency domains. In particular, the impact of the Si substrate...
This paper investigates the RF properties of 5 μm diameter/50 μm depth through-silicon vias (TSVs) built in CMOS 65nm technology. An equivalent lump model of the TSVs was developed based on 3D full-wave electromagnetic simulations and was validated by RF measurements. Based on the validated TSV model, the crosstalk among the TSVs was addressed as a function of distance and frequency. An equivalent...
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