The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We obtained frequency increase in resonant-tunneling-diode (RTD) terahertz (THz) oscillators by thick antenna electrode. The THz oscillator was composed of an RTD and slot antenna. Because an oscillation at resonance frequency of the RTD and slot antenna occurs when the negative differential conductance of the RTD compensates for the loss of the antenna, a reduction in the conduction loss and inductance...
We report on our recent results of terahertz oscillators with resonant tunneling diodes (RTDs) at room temperature. By a structure with high current density and small capacitance, a fundamental oscillation at 831 GHz was obtained in GaInAs/AlAs double-barrier RTDs integrated with slot antennas. A comparison with theoretical analysis shows a possibility of electron transition from the Γ to L bands...
A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is...
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even...
We observed coherent power combination in 3-element oscillator array using resonant tunneling diodes coupled through planar circuits. In the array, a single peak at 293 GHz with the output power of 13 muW was observed.
We observed coherent power combination in 3- and 6-element oscillator array using resonant tunneling diodes coupled through planar circuits in sub-THz range. InGaAs/AlAs resonant tunneling diode oscillators with slot antennas are arranged collinearly on the same InP wafer, and coupled with each other through a metal-insulator-metal stub structure. In 3-element array, a single peak at 293 GHz with...
We propose THz oscillators using resonant tunneling diodes (RTDs) and slot antennas with stub-shaped reflectors. The stub-shaped reflectors are composed of metal-insulator-metal layer structure, and are put at the edges of slot antenna to obtain high reflection of electromagnetic field. Oscillation frequency and output power were analyzed theoretically including all the parasitic elements in RTD and...
The third harmonic oscillation around 1 THz at room temperature and its frequency change with bias voltage were observed in GaInAs/AlAs double-barrier resonant tunneling diodes integrated with slot antennas. The frequency changed from about 0.96 to 1.02 THz. Theoretical analysis using simple equivalent circuit was in reasonable agreement with the measurement
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.