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This paper applies for the first time an RF equivalent of the four-point probe Kelvin DC technique to characterize the TSV inductance. This RF approach is based on two-port S-parameter measurements over a wide frequency range using a vector network analyzer (VNA). The approach is easy to implement to determine the TSV inductance, which can be complementary to the DC Kelvin measurements. In addition,...
This paper explores the possibility to use insulating spin-on dielectric materials for 2.5D interposers. Up to 7 photosensitive materials have been investigated in terms of minimum line/space and via resolution to determine the maximum wiring density. In addition the electrical performances of the best materials were assessed in DC and RF to extract the dielectric constant and loss tangent. Finally...
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
In a carbon nanofiber (CNF) metal contact such as a bridge between two metallic electrodes, passing high current (current stressing) reduces the total resistance of the system (CNF resistance RCNF and contact resistance Rc) by orders of magnitude. The role of current stressing is modeled as a reduction in the interfacial tunneling gap with transport characteristics attributed to tunneling between...
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