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In this work, for the first time, we propose and demonstrate an implant-free gate-all-around (GAA) low-temperature poly-Si (LTPS) nanowire (NW) device with Al2O3 dielectric and TiN gate. Since the channel and source/drain (S/D) regions are sharing one in-situ phosphorous-doped poly-Si material, the process cost could be efficiently reduced. Such novel scheme appears to be promising for both system-on-panel...
In this work, the chemical sensitivity of mass-sensitive chemical microsensors with a uniform layer sandwich structure vibrating in their lateral or in-plane flexural modes is investigated. It is experimentally verified that the relative chemical sensitivity of such resonant microsensors is -to a first order- independent of the microstructure's in-plane dimensions and the flexural eigenmode used,...
Tungsten oxide nanostructures have been paid much attention because of their particular physics and chemical properties. But until now, it is difficult to realize patterned growth of tungsten oxide nanowire arrays. In this paper, we demonstrate that tungsten oxide nanowire arrays can be controllably synthesized in patterned arrays at low temperature of 550°C by a simple ceramic template method. The...
Plastic deformation and damage accumulation at the contact surface are two important aspects of sliding wear of metal-matrix composite (MMC) materials such as AlSi alloys. The particular topography of the surfaces of the AlSi alloys has triggered the idea that the silicon particles form a load bearing surface over which the countersurfaces are sliding. Therefore, the wear resistance of AlSi surface...
In this work we present the fabrication and characterization of high aspect ratio silicon plate springs. The springs are fabricated using a combination of two technologies: high precision dual side wafer stepper alignment and deep reactive ion etching. Several process issues are discussed.and the optimum masking layer configuration to realize these structures is defined. Particularly the DRIE process...
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