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The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges,...
Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity,...
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