The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges,...
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.