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High-k metal gate (HKMG) has been implemented in production for nearly 10 years. As scaling of HKMG on bulk Si is reaching its limit, alternative device architecture such as FINFETs and FDSOI are being pursued. FDSOI is well suited for applications needing a balanced trade-off among power, performance and cost, such as the Internet of Things (IoTs). Here we show that compared to HKMG on bulk Si, HKMG...
We present a fully-integrated SOI CMOS 22nm technology for a diverse array of high-performance applications including server microprocessors, memory controllers and ASICs. A pre-doped substrate enables scaling of this third generation of SOI deep-trench-based embedded DRAM for a dense high-performance memory hierarchy. Dual-Embedded stressor technology including SiGe and Si:C for improved carrier...
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