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We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes...
Despite many recent research efforts, the influence of grain boundaries (GBs) on device properties of CuIn 1−x Ga x Se 2 solar cells is still not fully understood Here, we present a microscopic approach to characterizing GBs in polycrystalline CuIn 1−x Ga x Se 2 films with x=0.33. On samples from the same deposition process we applied methods giving...
We have developed a simple, manageable, and self-organized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance...
Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (~10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance...
Using thermal evaporation of ZnO at high temperature in vacuum, we fabricated ZnO nanowires (NWs) directly on carbon-based materials (amorphous carbon and photoresist). SEM observations showed that ZnO NWs preferentially nucleate on carbon and grew perpendicularly to the surface of the carbon-based materials. Based on this new developed carbon-assisted growth technology, we realized large-area and...
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