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The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information is extracted from AFM measurements of fabricated samples. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content...
We discuss the role of the discrete nature of misfit dislocations in XRD. For this, we consider a large number of different arrays of 60deg misfit dislocations relevant for SiGe/Si hetero-systems and introduce the concept of caustics of increasing order (Trinkaus and Naturf, 1973 and Trinkaus and Drepper, 1977) to determine the XRD peak positions for these arrays
We investigate the strain state in patterned SiGe lines of various widths after strain relaxation by He ion implantation and annealing (Hollander et al, 2001). We expected that the relaxation in such patterned virtual substrates must be more pronounced in one direction of the stripe than the other, thereby opening a possibility for further enhancement of hole mobility. We employed high-resolution...
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