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This paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. A new Large Signal model purpose with trapping effect. Design Power Amplifier in the purpose...
The main function of the DC-link decoupling capacitors, integrated between the voltage source and the power devices, is to suppress the effect of the parasitic inductors and minimize the voltage overshoot. Besides, decoupling capacitors can also affect the electromagnetic interference frequency spectra. In this paper, the elïects of decoupling capacitors are explained from the time-domain and the...
The effects of fast neutron radiation up to flux of 1014 cm−2 (1 MeV equivalent flux) upon the turn-on and forward static characteristics of MOS-Controlled Thyristor (MCT) are described in this work, based on physics-based 1-dimension analytical calculation and 2-dimension Silvaco simulation. It is reported for the first time that dependency of on-state specific resistance (Ron) upon neutron flux...
This paper studies the interaction of catastrophic failure of the driver and LED luminous flux decay for an integrated LED lamp with an electrolytic capacitor-free LED driver. Electronic thermal simulations are utilized to obtain the lamp’s dynamic history of temperature and current for two distinct operation modes: constant current mode (CCM) and constant light output (CLO) mode, respectively. Driver’s...
The reliability of SRAM used in space radiation environment is seriously decreased by single event upset (SEU) and single event transient (SET), which poses a great threat to the normal operation of aerospace equipment. In this paper, we propose a novel structure Delay Self Restoring Logic (DSRL) based on SRL. Its storage structure makes up of three Muller C-elements and two phase inverters. It separates...
An analytical large-signal model with improved drain current functions and a new parameter extraction methodology for high power Gallium Nitride(GaN) High-Electron Mobility Transistors (HEMTs) are presented in this paper. The new I-V functions can accurately model the drain current and non-bell-shaped transconductance. The key point of the proposed parameter extraction methodology is first to determine...
Online Social Networks (OSNs) have been used as the means for a variety of applications, like employment system, e-Commerce and CRM system. In these applications, social influence acts as a significant role, affecting people's decision-making. However, the existing social influence evaluation methods do not fully consider the social contexts, like the social relationships and the social trust between...
In this paper, the effect of N-well for single event upset in 65nm CMOS triple well technology SRAM CELLS is studied. The study shows that charge sharing collection increases because of the existing of N-well in triple-well technology. While it restrains the single event upset and reduces the soft error rate (SER) compared with the SRAM whose NMOS are dual-well technology devices. The result of this...
In this paper, the effect of N-well for single event upset in 65nm CMOS triple well technology SRAM CELLS is studied. The study shows that charge sharing collection increases because of the existing of N-well in triple-well technology. While it restrains the single event upset and reduces the soft error rate (SER) compared with the SRAM whose NMOS are dual-well technology devices. The result of this...
This paper proposes a neural network-based method for modeling vertical interconnect balls. The pi equivalent circuit with lumped element was used to characterize the electrical performance of balls. The values of lumped elements were extracted from the full-wave simulate result, and the extracted data was used to train back-propagation (BP) neural networks to obtain the relationship between the lumped...
Simultaneous switching noise (SSN) and its behavior have recently become more and more critical in IC and other highspeed system designs [1][2]. This is attributed to ever-increasing speed, frequency, density, and power, as well as decreasing circuit dimensions and logic levels. The difference in a few mill volts may cause the system to fail. Therefore, it is very important to understand the characteristics...
This paper presents a simple methodology for deducing the resistors of attenuators based on the relationship of S parameters and ABCD metric. Single attenuators composed of embedded thin film resistors simulate up to 20 GHz. For 30 dB attenuators is difficult to implement for wide bandwidth, cascade attenuators can solve the problem.
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