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We propose a new technique for femtosecond pulse characterization — transient-grating self-referenced spectral interferometry. Using this technique, we built an extremely simple, alignment-free device and successfully sub-two-cycle 10-fs pulses at 1.75 μm.
This paper reports an electromagnetic shielded cantilever-tip microwave-probe for conductive-property imaging at micro/nano surface-area. Equipped with an ultra-sharp tip apex (<;50 nm), the probe features small conducting path resistance of Rs<;5Ω and conducting path-to ground capacitance of Ctip≈1pF. These optimal-designed parameters facilitate satisfactory spatial resolution and microwave-signal...
In the present work, Raman spectroscopy is employed to study the strain and carbon substitution effect of SiC doped polycrystalline MgB2. We demonstrated that Raman spectroscopy analysis is more accurate to estimate the carbon substitution compared to the X-ray diffraction analysis. Raman result showed that lattice shrinkage cannot account alone for carbon incorporation where high level of lattice...
In this paper, Si-MOS capacitors with HfTiO/SiON stack gate dielectric were fabricated by using Si-surface thermal passivation in NO and N2O ambients respectively and reactive co-sputtering technology. Results show that the sample pretreated in NO ambient has excellent interface properties, low gate leakage current density and high reliability. This is attributed to the formation of a SiON interlayer...
For NiSi FUSI gate transistors, switching behaviors have been observed after breakdown (BD) under certain favorable conditions. The conductive BD path can be ??switched-off?? if a reverse bias, as opposed to the stressing voltage, is applied, a condition required for observing SET and RESET conduction in switching material systems. Using the percolation model of BD of gate dielectric systems, we explain...
STEM/EELS were used to probe the localized electronic structures of the defective oxide. Our results show that the electronic structures of breakdown oxide are similar to the oxygen deficient suboxide with formation of oxygen vacancies. The understanding of the basic material properties will be helpful for the improvements of the state-of-the-art devices.
Using scanning transmission electron microscope with high resolution electron energy loss spectroscopy, the chemical nature of the percolation path formed in ultrathin SiON layers is studied for digital and analog breakdown (BD). Our results show that the diameter of the percolation path dilates from 30 nm to 55 nm as the gate leakage current increases from 2 muA to 40 muA. Oxygen deficiency in the...
Post-breakdown reliability forms an important aspect of ultrathin gate dielectric lifetime projection in state-of-the-art MOSFET. In particular, digital breakdown plays a predominant role in the early stage of the dielectric breakdown. In this paper, we review the importance of digital breakdown in SiON gate dielectrics of less than 2.5 nm, the possible underlying mechanism(s) and its impact on the...
This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFETs demonstrated a 3.9Omega resistance at VG=5 V (with negligible gate current) and JD=154 A/cm2, corresponding...
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