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Ge thin film is expected as an active layer in a thin-film transistor (TFT) because the electron mobility of Ge is larger than that of Si. In this study, the crystallization of Ge thin film by soft X-ray irradiation and the improvement of interface property of poly-Ge/SiO2 in poly-Ge TFT by atomic hydrogen annealing (AHA) are investigated for realization of high-performance poly-Ge TFT. The drain...
Novel activation method of B dopant using soft X-ray undulator was examined. As the photon energy of irradiated soft X-ray closed to the energy of core level of Si 2p, the activation ratio was increased. The effect of soft X-ray irradiation on B activation was remarkable at temperature lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of...
We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25–220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580 °C and from 500 to 390 °C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and...
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