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In this study, we proposed Ge-Te-Ti (GTT) as a novel phase change material for high data retention use. Just with a small Ti fraction, the temperature for 10-yr's data retention reaches 175°C, and the grain size decreases on order of magnitude. In order to reveal the physical origin of thermal stability variation trend, we performed isothermal sheet resistance measurement combining with Johnson-Mehl-Avrami-Kolmogrov...
This paper presents a novel coordinated control method of the frequency and voltage in an isolated industrial power system for aluminum production. The isolated system is on a wind penetration level around 40%. Since the particular structure and characteristic of the electrolytic aluminum, a reactive power closed loop control method based on frequency information is proposed. According to online identification...
The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally...
Ta/TaN bi-layer structure is currently used in the ultra-large scale integrated circuits (ULSI) interconnect as barrier for copper because of its good adhesion to both SiO 2 and Cu wire. In this work Cu, Ta and TaN layers were prepared by sputtering technology. X-ray diffraction, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) as well as transmission electron microscopy...
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