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Many prior works have investigated electromigration (EM) on full-chip power grid interconnects, which has become one of major reliability concerns in nanometer VLSI design. However, most of the published results were obtained under the assumption of uniformly distributed temperature and/or residual stress across interconnects. In this paper, we demonstrate the implementation of novel methodology and...
This paper presents a novel approach and techniques for electromigration (EM) assessment in power delivery networks. An increase in the voltage drop above the threshold level, caused by EM-induced increase in resistances of the individual interconnect segments, is considered as a failure criterion. This criterion replaces a currently employed conservative weakest segment criterion, which does not...
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