The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the fabrication process temperature was suppressed below 180 °C. To improve the surface roughness and water vapor transmission rate of the PEN substrate, the organic/inorganic hybrid barrier layer was introduced. The gate-stack was composed of all oxide layers,...
We proposed a transparent and/or flexible charge-trap-type memory thin film transistors (CTM-TFTs) with a top-gate structure composed of zinc-oxide (ZnO) charge-trap and In-Ga-Zn-O (IGZO) active channel layers. The memory on/off ratio higher than 7-orders-of magnitude was obtained for the fully transparent CTM-TFTs fabricated on glass substrates when the width and amplitude of program pulses were...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.