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Immunostimulant In Situ Hydrogels
In article number 2204288, Ye Zhou and co‐workers propose a time‐saving ultraviolet ozone technique to tune the work function of MXene electrodes. Van der Waals contact between MXene and MoS2 can alleviate the Fermi level pinning effectively, and the pinning factor can be greatly optimized to 0.87. This study provides a new strategy to eliminate the negative effects...
The quality of the contact between source/drain electrodes and 2D transition metal dichalcogenides plays a decisive role in improving transistor performance. Understanding the mechanisms of Fermi level pinning (FLP) and finding out the strategies to solve FLP problems can further promote the development of 2D electronics. In this study, the suppressing effect of MXene on FLP in MoS2 transistors by...
Mechano‐Nociceptor Systems
In article number 2200185, Ye Zhou and co‐workers develop a diffusive memristor with better behaviors of conductive filaments and higher device uniformity based on 2D h‐BN, which could be used as an artificial nociceptor to mimic biological nociceptor properties. Moreover, a self‐powered mechano‐nociceptor is demonstrated by connecting a self‐made triboelectric nanogenerator...
The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well‐crystallized two‐dimensional (2D) h...
The mimicking of both homosynaptic and heterosynaptic plasticity using a high‐performance synaptic device is important for developing human‐brain–like neuromorphic computing systems to overcome the ever‐increasing challenges caused by the conventional von Neumann architecture. However, the commonly used synaptic devices (e.g., memristors and transistors) require an extra modulate terminal to mimic...
Memtransistors
In article number 2103175, Ye Zhou and co‐workers utilize two‐dimensional WSe2 as channel material to fabricate a memtransistor for synaptic plasticity simulation. Benefitting from the multi‐terminal input and high adjustability, the memtransistor can mimic both homosynaptic and heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability...
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