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The composition and atomic and electronic structure of a silicon nanowire (SiNW) array coated with tin oxide are studied at the spectromicroscopic level. SiNWs are covered from top to down with a wide bandgap tin oxide layer using a metal–organic chemical vapor deposition technique. Results obtained via scanning electron microscopy and X‐ray diffraction showed that tin‐oxide nanocrystals, 20 nm in...
Efficient light‐stimulated hydrogen generation from top–down produced highly doped n‐type silicon nanowires (SiNWs) with silver nanoparticles (AgNPs) in water‐containing medium under white light irradiation is reported. It is observed that SiNWs with AgNPs generate at least 2.5 times more hydrogen than SiNWs without AgNPs. The authors’ results, based on vibrational, UV–vis, and X‐ray spectroscopy...
The general goal of this work is to study the near‐surface region structure of Cz Si wafers subjected to the low‐temperature (25‐350 °C) low‐energy (300 eV) ion‐beam treatment by hydrogen, helium or argon. The properties of a thin (several nanometers) near‐surface layer of the wafers were investigated using the X‐ray absorption near edge structure (XANES), X‐ray photoelectron spectroscopy (XPS), and...
Here we present the results of systematic simulating studies of atomic configurations in silicon “surface clusters” with different numbers (per cluster) of interstitial H and O atoms as impurities, obtained by semi‐empirical (PM3) and DFT quantum‐chemical methods. The aim of modeling was to study the near‐surface region Si amorphization caused by H‐incorporation (from H‐plasma, for example) and changes...
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